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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Schottky Barriers for Pt on 6H- and 4H-SiC (0001),...

Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

921-924

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.921

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Online since:

April 2002

Authors:

O. Shigiltchoff, Tsunenobu Kimoto, H. McD. Hobgood, Philip G. Neudeck, L.M. Porter, Robert P. Devaty, Wolfgang J. Choyke

Keywords:

Breakdown Voltage, C-V Measurement, Internal Photoemission, I-V, Schottky Barrier

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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