Paper Titles

Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces
p.909

Titanium-Based Ohmic Contact on p-Type 4H-SiC
p.913

Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode
p.917

Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
p.921

Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
p.925

Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
p.929

Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
p.933

Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
p.937

Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide
p.941

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Electrical Properties and Interface Reaction of...

Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.925

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Online since:

April 2002

Authors:

Tomoaki Hatayama, Kazuaki Kawahito, Hiroshi Kijima, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Annealing, Barrier Height, Copper (Cu), Schottky, Silicide, X-Ray Photoelectron Spectroscopy (XPS)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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