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Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
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Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
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Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide
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Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact
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Reactive Ion Etching Process of 4H-SiC Using the CHF₃/O₂ Mixtures and a Post-O₂ Plasma-Etching Process
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Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF₆/O₂ Plasma
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Some Comparative Properties of Diffusion-Welded...

Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

941-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.941

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Online since:

April 2002

Authors:

Oleg Korolkov, Toomas Rang

Keywords:

Diffusion Welding, Schottky Contact, SiC Substrates, Specific Contact Resistance, Structural Defects

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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