Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

953-956

DOI:

10.4028/www.scientific.net/MSF.389-393.953

Citation:

B. S. Kim et al., "Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma", Materials Science Forum, Vols. 389-393, pp. 953-956, 2002

Online since:

April 2002

Export:

Price:

$35.00

In order to see related information, you need to Login.