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Passivation of the Oxide/4H-SiC Interface

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Silicon Carbide and Related Materials 2001 View Preview

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

973-976

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.973

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Online since:

April 2002

Authors:

Philippe Jamet, Sima Dimitrijev, P. Tanner

Keywords:

Gate Oxide, Interface States (or Traps), Nitridation, Passivation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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