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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Effect of Process Variations on 4H Silicon Carbide...

Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

977-980

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.977

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Online since:

April 2002

Authors:

C.Y. Lu, James A. Cooper, G.Y. Chung, John R. Williams, K. McDonald, Leonard C. Feldman

Keywords:

Inversion, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Mobility, NO Annealing, Process, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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