Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

993-996

DOI:

10.4028/www.scientific.net/MSF.389-393.993

Citation:

X. W. Wang et al., "Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing", Materials Science Forum, Vols. 389-393, pp. 993-996, 2002

Online since:

April 2002

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