Paper Titles

Improving 4H-SiC/SiO₂ Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO₂ and Annealing
p.993

Improvement of SiO₂/α-SiC Interface Properties by Nitrogen Radical Treatment
p.997

New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures
p.1001

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures
p.1005

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
p.1009

The Investigation of 4H-SiC/SiO₂ Interfaces by Optical and Electrical Measurements
p.1013

Characteristics of Mobile Ions in the SiO₂ Films of SiC-MOS Structures
p.1017

Abnormal Hysteresis Property of SiC Oxide C-V Characteristics
p.1021

ESR Characterization of SiC Bulk Crystals and SiO₂/SiC Interface
p.1025

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Effects of Successive Annealing of Oxides on...

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1009-1012

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1009

Citation:

Cite this paper

Online since:

April 2002

Authors:

Masahito Yoshikawa, Mirei Satoh, Takeshi Ohshima, Hisayoshi Itoh

Keywords:

C-V, Interface, Interface States (or Traps), MOS, Steam Annealing, Successive Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: