Paper Titles

Improvement of SiO₂/α-SiC Interface Properties by Nitrogen Radical Treatment
p.997

New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures
p.1001

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures
p.1005

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
p.1009

The Investigation of 4H-SiC/SiO₂ Interfaces by Optical and Electrical Measurements
p.1013

Characteristics of Mobile Ions in the SiO₂ Films of SiC-MOS Structures
p.1017

Abnormal Hysteresis Property of SiC Oxide C-V Characteristics
p.1021

ESR Characterization of SiC Bulk Crystals and SiO₂/SiC Interface
p.1025

Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
p.1029

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393The Investigation of 4H-SiC/SiO2 Interfaces by...

The Investigation of 4H-SiC/SiO₂ Interfaces by Optical and Electrical Measurements

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1013-1016

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1013

Citation:

Cite this paper

Online since:

April 2002

Authors:

Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Tamotsu Jikimoto, Hidekazu Tsuchida, Masahito Yoshikawa, Yuichi Tomioka, M. Midorikawa, Yasuto Hijikata, Sadafumi Yoshida

Keywords:

C-V, FT-IR, Interface Layer, MOS, Spectroscopic Ellipsometry (SE)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: