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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Characteristics of Mobile Ions in the SiO2 Films...

Characteristics of Mobile Ions in the SiO₂ Films of SiC-MOS Structures

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1017-1020

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1017

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Online since:

April 2002

Authors:

Seong Joo Jang, H.J. Song, K.Y. Oh, K.H. Lee, Y.J. Lim, Nam Ihn Cho

Keywords:

B-T Stress, Capacitance-Voltage Measurement, Flatband Voltage, Mobile Ion, SiC-MOS Capacitor, Thermal Oxidation, Thermally Stimulated Currents

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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