Characteristics of Mobile Ions in the SiO2 Films of SiC-MOS Structures

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1017-1020

DOI:

10.4028/www.scientific.net/MSF.389-393.1017

Citation:

S. J. Jang et al., "Characteristics of Mobile Ions in the SiO2 Films of SiC-MOS Structures", Materials Science Forum, Vols. 389-393, pp. 1017-1020, 2002

Online since:

April 2002

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$35.00

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