X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1033-1036

DOI:

10.4028/www.scientific.net/MSF.389-393.1033

Citation:

Y. Hijikata et al., "X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces", Materials Science Forum, Vols. 389-393, pp. 1033-1036, 2002

Online since:

April 2002

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$35.00

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