Paper Titles

Characteristics of Mobile Ions in the SiO₂ Films of SiC-MOS Structures
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Abnormal Hysteresis Property of SiC Oxide C-V Characteristics
p.1021

ESR Characterization of SiC Bulk Crystals and SiO₂/SiC Interface
p.1025

Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
p.1029

X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
p.1033

SIMS Analyses of SiO₂/4H-SiC(0001) Interface
p.1037

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
p.1041

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs
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Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393X-Ray Photoelectron Spectroscopy Studies of...

X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1033-1036

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1033

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Online since:

April 2002

Authors:

Yasuto Hijikata, Hiroyuki Yaguchi, Masahito Yoshikawa, Sadafumi Yoshida

Keywords:

Bond, Post-Oxidation Annealing, Re-Oxidation, SiC MOSFET, Slope-Shaped Oxide Film, X-Ray Photoelectron Spectroscopy (XPS)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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