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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Hall Measurements of Inversion and...

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1041-1044

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1041

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Online since:

April 2002

Authors:

K. Chatty, S. Banerjee, T. Paul Chow, Ronald J. Gutmann, Emil Arnold, Dev Alok

Keywords:

Accumulation, Hall, Interface States (or Traps), Inversion

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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