SIMS Analyses of SiO2/4H-SiC(0001) Interface

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1037-1040

DOI:

10.4028/www.scientific.net/MSF.389-393.1037

Citation:

K. Yamashita et al., "SIMS Analyses of SiO2/4H-SiC(0001) Interface", Materials Science Forum, Vols. 389-393, pp. 1037-1040, 2002

Online since:

April 2002

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