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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393SIMS Analyses of SiO2/4H-SiC(0001) Interface

SIMS Analyses of SiO₂/4H-SiC(0001) Interface

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1037-1040

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1037

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Online since:

April 2002

Authors:

Kenya Yamashita, Makoto Kitabatake, Osamu Kusumoto, Kunimasa Takahashi, Masao Uchida, Ryouko Miyanaga, Hisayoshi Itoh, Masahito Yoshikawa

Keywords:

C-V, Interface, MOS, Nit, Oxide, SIMS, SiO₂

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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