Paper Titles

X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces
p.1033

SIMS Analyses of SiO₂/4H-SiC(0001) Interface
p.1037

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
p.1041

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs
p.1045

Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs
p.1049

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
p.1053

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
p.1057

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
p.1061

4H-SiC MOSFETs on (03-38) Face
p.1065

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Influence of the Wet Re-Oxidation Procedure on...

Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1049-1052

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1049

Citation:

Cite this paper

Online since:

April 2002

Authors:

Ryouji Kosugi, Mitsuo Okamoto, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Kazuo Arai

Keywords:

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Pyrogenic Re-Oxidation Annealing (ROA), Water Vapor Content

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: