A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1057-1060

DOI:

10.4028/www.scientific.net/MSF.389-393.1057

Citation:

K. Fukuda et al., "A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing", Materials Science Forum, Vols. 389-393, pp. 1057-1060, 2002

Online since:

April 2002

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