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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Improved Channel Mobility in Normally-Off 4H-SiC...

Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1069-1072

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1069

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Online since:

April 2002

Authors:

Shinsuke Harada, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kazuhiro Adachi, Kenji Fukuda, Kazuo Arai

Keywords:

4H-SiC, Buried Channel, Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Oxidation, Threshold Voltage

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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