4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1073-1076

DOI:

10.4028/www.scientific.net/MSF.389-393.1073

Citation:

S. Kaneko et al., "4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide", Materials Science Forum, Vols. 389-393, pp. 1073-1076, 2002

Online since:

April 2002

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$38.00

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