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Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-3934H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1073-1076

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1073

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Online since:

April 2002

Authors:

Saichirou Kaneko, Hideaki Tanaka, Yoshio Shimoida, Norihiko Kiritani, Satoshi Tanimoto, Mitsugu Yamanaka, Masakatsu Hoshi

Keywords:

ACCUFET, Field Effect Mobility, Interface States (or Traps), Stacked Gate Oxide

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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