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Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
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4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
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4H-SiC Delta-Doped Accumulation-Channel MOS FET
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Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface
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TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
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Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
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Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
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Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Channel Engineering of Buried-Channel 4H-SiC...

Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1081-1084

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1081

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Online since:

April 2002

Authors:

Tetsuo Hatakeyama, Shinsuke Harada, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

Keywords:

Buried Channel, Channel Engineering, Green's Function, Interface, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Mobility, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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