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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Gamma-Ray Irradiation Effects on the Electrical...

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1093-1096

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1093

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Online since:

April 2002

Authors:

Takeshi Ohshima, Kin Kiong Lee, Akihiko Ohi, Masahito Yoshikawa, Hisayoshi Itoh

Keywords:

Annealing of Gate-Oxide, Gamma-Ray Irradiation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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