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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Hysteresis in Transfer Characteristics in 4H-SiC...

Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1089-1092

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1089

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Online since:

April 2002

Authors:

K. Chatty, S. Banerjee, T. Paul Chow, Ronald J. Gutmann

Keywords:

Depletion/Accumulation, Hysteresis, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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