Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface
p.1081
p.1081
TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
p.1085
p.1085
Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
p.1089
p.1089
Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
p.1093
p.1093
Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
p.1097
p.1097
Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation
p.1101
p.1101
Plasma Oxidation of SiC at Low Temperatures (below 300°C)
p.1105
p.1105
Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
p.1109
p.1109
Oxidation of Porous 4H-SiC Substrates
p.1113
p.1113
Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
1097-1100
Citation:
Online since:
April 2002
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Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
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