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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Oxidation of Porous 4H-SiC Substrates

Oxidation of Porous 4H-SiC Substrates

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1113-1118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1113

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Online since:

April 2002

Authors:

Stanislav I. Soloviev, Taniya Das, Tangali S. Sudarshan

Keywords:

Atomic Force Microscope (AFM), Oxidation, Porous Layer

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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