Paper Titles

Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation
p.1101

Plasma Oxidation of SiC at Low Temperatures (below 300°C)
p.1105

Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
p.1109

Oxidation of Porous 4H-SiC Substrates
p.1113

Advances in SiC Materials and Technology for Schottky Diode Applications
p.1119

Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range
p.1125

A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability
p.1129

Impact of Material Defects on SiC Schottky Barrier Diodes
p.1133

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
p.1137

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Advances in SiC Materials and Technology for...

Advances in SiC Materials and Technology for Schottky Diode Applications

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1119-1124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1119

Citation:

Cite this paper

Online since:

April 2002

Authors:

Lea Di Cioccio, Thierry Billon

Keywords:

Characterization, Diode, Epitaxy, Ion Implantation, Schottky, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: