Paper Titles

Oxidation of Porous 4H-SiC Substrates
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Advances in SiC Materials and Technology for Schottky Diode Applications
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Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range
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A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability
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Impact of Material Defects on SiC Schottky Barrier Diodes
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A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
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Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
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4H-SiC Schottky Diodes with High On/Off Current Ratio
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Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Impact of Material Defects on SiC Schottky Barrier...

Impact of Material Defects on SiC Schottky Barrier Diodes

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1133-1136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1133

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Online since:

April 2002

Authors:

D.T. Morisette, James A. Cooper

Keywords:

Defect, Dislocation, Leakage Current, Schottky Diode, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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