Paper Titles

Impact of Material Defects on SiC Schottky Barrier Diodes
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A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
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Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
p.1141

4H-SiC Schottky Diodes with High On/Off Current Ratio
p.1145

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
p.1149

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias
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High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations
p.1157

Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
p.1161

Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Optimisation of Implanted Guard-Ring Terminations...

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1149-1152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1149

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Online since:

April 2002

Authors:

Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill, Russell Gwilliam

Keywords:

Breakdown Voltage, Guard Rings, Implantation, Schottky Diode

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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