Paper Titles

A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
p.1137

Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
p.1141

4H-SiC Schottky Diodes with High On/Off Current Ratio
p.1145

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
p.1149

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias
p.1153

High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations
p.1157

Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
p.1161

Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
p.1165

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode
p.1169

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Performance of 4H-SiC Schottky Diodes with...

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1153-1156

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1153

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Online since:

April 2002

Authors:

Hans Peter Felsl, Gerhard Wachutka

Keywords:

Device Simulation, Fast-Switching Power Device, Interface Charges, p-Guard-Ring Junction Termination, Schottky Diode

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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