Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1153-1156

DOI:

10.4028/www.scientific.net/MSF.389-393.1153

Citation:

H. P. Felsl and G. Wachutka, "Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias", Materials Science Forum, Vols. 389-393, pp. 1153-1156, 2002

Online since:

April 2002

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