Paper Titles

4H-SiC Schottky Diodes with High On/Off Current Ratio
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Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
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Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias
p.1153

High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations
p.1157

Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
p.1161

Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
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Reverse Characteristics of a 4H-SiC Schottky Barrier Diode
p.1169

Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
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4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Development of 600 V/ 8 A SiC Schottky Diodes with...

Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1161-1164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1161

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Online since:

April 2002

Authors:

Francois Templier, Pierre Ferret, Lea Di Cioccio, Emmanuel Collard, André Lhorte, Thierry Billon

Keywords:

Edge Termination, Epitaxy, Manufacturing, Passivation, Schottky Diode

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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