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Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
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Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
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Reverse Characteristics of a 4H-SiC Schottky Barrier Diode
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Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
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4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW
p.1177

Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space
p.1181

Application-Oriented Unipolar Switching SiC Devices
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High-Performance UMOSFETs in 4H-SiC
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Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-3934H-SiC MPS Diode Fabrication and Characterization...

4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1177-1180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1177

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Online since:

April 2002

Authors:

Peter Alexandrov, B. Wright, M. Pan, M. Weiner, Leonid Fursin, Jian Hui Zhao

Keywords:

Half-Bridge Inverter, P-N Junction, Schottky Diode

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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