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Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
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4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW
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Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space
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Application-Oriented Unipolar Switching SiC Devices
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High-Performance UMOSFETs in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Performance of SiC Bipolar (PiN) and Unipolar...

Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1181-1184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1181

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Online since:

April 2002

Authors:

D.T. Morisette, James A. Cooper

Keywords:

PiN Diode, Schottky Diode, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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