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Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
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Reverse Characteristics of a 4H-SiC Schottky Barrier Diode
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4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW
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Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Power Schottky and p-n Diodes on SiC Epi-Wafers...

Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1173-1176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1173

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Online since:

April 2002

Authors:

Alexander Syrkin, Vladimir Dmitriev, Rositza Yakimova, Anne Henry, Erik Janzén

Keywords:

Micropipe Healing, Schottky Diode, Silicon Carbide Power Diodes

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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