Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1165-1168

Citation:

K. Ohtsuka et al., "Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode", Materials Science Forum, Vols. 389-393, pp. 1165-1168, 2002

Online since:

April 2002

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.