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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393High-Performance UMOSFETs in 4H-SiC

High-Performance UMOSFETs in 4H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1191-1194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1191

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Online since:

April 2002

Authors:

Y. Li, James A. Cooper, Michael A. Capano

Keywords:

Edge Termination, Junction Termination Extension (JTE), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Power Device, Silicon Carbide (SiC), Trench

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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