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HomeMaterials Science ForumMaterials Science Forum Vols. 389-3935.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2

5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm²

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1199-1202

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1199

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Online since:

April 2002

Authors:

Yoshitaka Sugawara, Katsunori Asano, Daisuke Takayama, Sei Hyung Ryu, R. Singh, John W. Palmour, Toshihiko Hayashi

Keywords:

FET, Junction Termination Extension (JTE), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), RonS, SiC Power Devices, Turn-Off Time, Turn-On Time

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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