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HomeMaterials Science ForumMaterials Science Forum Vols. 389-3934H- and 6H-SiC MOSFETs Fabricated on Sloped...

4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1215-1218

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1215

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Online since:

April 2002

Authors:

Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Anisotropy, Channel Mobility, KOH Etching, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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