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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393A 600 V SiC Trench JFET

A 600 V SiC Trench JFET

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1219-1222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1219

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Online since:

April 2002

Authors:

R.N. Gupta, H.R. Chang, E. Hanna, C. Bui

Keywords:

600V, FET, Junction Field Effect Transistor (JFET), Low Loss, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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