Paper Titles

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
p.1195

5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm²
p.1199

Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
p.1203

Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs
p.1207

SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)
p.1211

4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
p.1215

A 600 V SiC Trench JFET
p.1219

A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET
p.1223

2 kV 4H-SiC Junction FETs
p.1227

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393SiC Vertical DACFET (Vertical Delta-Doped...

SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1211-1214

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1211

Citation:

Cite this paper

Online since:

April 2002

Authors:

Osamu Kusumoto, Toshiya Yokogawa, Kenya Yamashita, Kunimasa Takahashi, Makoto Kitabatake, Masao Uchida, Ryouko Miyanaga

Keywords:

Channel Mobility, DACFET, Delta-Doping, DIMOS, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: