SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1211-1214

DOI:

10.4028/www.scientific.net/MSF.389-393.1211

Citation:

O. Kusumoto et al., "SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)", Materials Science Forum, Vols. 389-393, pp. 1211-1214, 2002

Online since:

April 2002

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Price:

$35.00

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