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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Optimized P-Well Profile Preventing Punch-Through...

Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1207-1210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1207

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Online since:

April 2002

Authors:

Yoshio Shimoida, Saichirou Kaneko, Hideaki Tanaka, Masakatsu Hoshi

Keywords:

Avalanche Breakdown, Power MOSFET, Punch-Through, P-Well, TCAD

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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