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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in...

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1195-1198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1195

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Online since:

April 2002

Authors:

Sei Hyung Ryu, Anant K. Agarwal, Jim Richmond, Mrinal K. Das, Lori A. Lipkin, John W. Palmour, N.S. Saks, John R. Williams

Keywords:

Avalanche, High Voltage (HV), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), NO Annealing, Switching Speed

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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