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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393A Novel High-Voltage Normally-Off 4H-SiC Vertical...

A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1223-1226

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1223

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Online since:

April 2002

Authors:

Jian Hui Zhao, Larry X. Li, Kiyoshi Tone, Peter Alexandrov, M. Pan, M. Weiner

Keywords:

Numerical Simulation and Fabrication, Power Device, Vertical JFETs

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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