A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1223-1226

DOI:

10.4028/www.scientific.net/MSF.389-393.1223

Citation:

J. H. Zhao et al., "A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET", Materials Science Forum, Vols. 389-393, pp. 1223-1226, 2002

Online since:

April 2002

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$35.00

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