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HomeMaterials Science ForumMaterials Science Forum Vols. 389-3932 kV 4H-SiC Junction FETs

2 kV 4H-SiC Junction FETs

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1227-1230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1227

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Online since:

April 2002

Authors:

Hidekatsu Onose, Atsuo Watanabe, Tomoyuki Someya, Yutaka Kobayashi

Keywords:

High Voltage (HV), Junction Field Effect Transistor (JFET), On-State Resistance, Silicon Carbide (SiC), SIT

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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