Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1231-1234

DOI:

10.4028/www.scientific.net/MSF.389-393.1231

Citation:

L. Zhu and T. P. Chow, "Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor", Materials Science Forum, Vols. 389-393, pp. 1231-1234, 2002

Online since:

April 2002

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