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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Design and Processing of High-Voltage 4H-SiC...

Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1231-1234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1231

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Online since:

April 2002

Authors:

Lin Zhu, T. Paul Chow

Keywords:

4H-SiC, Junction Field Effect Transistor (JFET), Simulation, Trench

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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