Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1235-1238

DOI:

10.4028/www.scientific.net/MSF.389-393.1235

Citation:

S.-M. Koo et al., "Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors", Materials Science Forum, Vols. 389-393, pp. 1235-1238, 2002

Online since:

April 2002

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$35.00

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