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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Influence of Trenching Effect on the...

Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1235-1238

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1235

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Online since:

April 2002

Authors:

Sang-Mo Koo, Sang Kwon Lee, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

Keywords:

Dry Etching, Junction Field Effect Transistor (JFET), Silicon Carbide (SiC), Trenching Effect

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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