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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Realization of a High-Current and Low RON 600V...

Realization of a High-Current and Low R_ON 600V Current-Limiting Device

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1247-1250

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1247

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Online since:

April 2002

Authors:

F. Nallet, Philippe Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre Chante

Keywords:

4H-SiC, Current Limiting Device, Forward Current Density, I-V Characteristic, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Saturation, Simulation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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