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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393High-Power SiC Diodes: Characteristics,...

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1259-1264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1259

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Online since:

April 2002

Authors:

H. Lendenmann, Fanny Dahlquist, Peder Bergman, H. Bleichner, Christer Hallin

Keywords:

300A/4.5kV SiC Diodes, Forward Degradation, Junction Barrier Schottky (JBS) Diode, PiN Diode, SiC Defect Table, Stacking Fault

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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