Paper Titles

Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated Circuits
p.1255

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
p.1259

High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
p.1265

Study of SiC PiN Diodes Subjected to High Current Density Pulses
p.1269

High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
p.1273

Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects
p.1277

Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
p.1281

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
p.1285

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
p.1289

HomeMaterials Science ForumMaterials Science Forum Vols. 389-393High-Voltage SiC pn Diodes with Avalanche...

High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1273-1276

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1273

Citation:

Cite this paper

Online since:

April 2002

Authors:

Yuki Negoro, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Avalanche Breakdown, Ion Implantation, pn Diodes

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: