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Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects
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Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
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Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
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Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Microstructural Characterization of...

Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1281-1284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1281

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Online since:

April 2002

Authors:

Jin Qiang Liu, Marek Skowronski, Christer Hallin, R. Söderholm, H. Lendenmann

Keywords:

SiC Diodes, Stacking Fault, TEM

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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