Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1285-1288

DOI:

10.4028/www.scientific.net/MSF.389-393.1285

Citation:

U. Zimmermann et al., "Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers", Materials Science Forum, Vols. 389-393, pp. 1285-1288, 2002

Online since:

April 2002

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