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Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects
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Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
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Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
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Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
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Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes
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An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Electrical Characterization of High-Voltage 4H-SiC...

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1285-1288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1285

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Online since:

April 2002

Authors:

Uwe Zimmermann, John Österman, Jie Zhang, Anne Henry, Anders Hallén

Keywords:

Breakdown Voltage, Degradation, Diode, HTCVD, MPS, PiN, Schottky

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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