Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1277-1280

Citation:

M. Domeij et al., "Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects", Materials Science Forum, Vols. 389-393, pp. 1277-1280, 2002

Online since:

April 2002

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.