Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1277-1280

DOI:

10.4028/www.scientific.net/MSF.389-393.1277

Citation:

M. Domeij et al., "Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects", Materials Science Forum, Vols. 389-393, pp. 1277-1280, 2002

Online since:

April 2002

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