High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
p.1259
p.1259
High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
p.1265
p.1265
Study of SiC PiN Diodes Subjected to High Current Density Pulses
p.1269
p.1269
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
p.1273
p.1273
Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects
p.1277
p.1277
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
p.1281
p.1281
Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
p.1285
p.1285
Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
p.1289
p.1289
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
p.1293
p.1293
Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects
Abstract:
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Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
1277-1280
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Online since:
April 2002
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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