Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

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Periodical:

Materials Science Forum (Volumes 389-393)

Edited by:

S. Yoshida, S. Nishino, H. Harima and T. Kimoto

Pages:

1289-1292

DOI:

10.4028/www.scientific.net/MSF.389-393.1289

Citation:

K. Isoird et al., "Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization", Materials Science Forum, Vols. 389-393, pp. 1289-1292, 2002

Online since:

April 2002

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