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Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects
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Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
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Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
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Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
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Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes
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An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
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A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Study of 4H-SiC High-Voltage Bipolar Diodes under...

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1289-1292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1289

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Online since:

April 2002

Authors:

K. Isoird, Mihai Lazar, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Jean-Pierre Chante

Keywords:

Bipolar Diode, Breakdown Voltage, Junction Termination Extension (JTE), OBIC, Surface Charge

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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