Paper Titles

Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects
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Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
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Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization
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Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
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Electroluminescence Analysis of Al⁺ and B⁺ Implanted pn Diodes
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An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
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A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination
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The Deep Boron Level in High-Voltage PiN Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Photon Emission Analysis of Defect-Free 4H-SiC pn...

Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1293-1296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1293

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Online since:

April 2002

Authors:

C. Banc, Edwige Bano, Thierry Ouisse, Konstantin Vassilevski, Konstantinos Zekentes

Keywords:

Avalanche Breakdown, p⁺-n-n⁺ Diodes, Photon Emission, Striations

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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